MS1006 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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RF AND MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• Optimized for SSB
• 30 MHz
• 50 Volts
• Common Emitter
• Gold Metallization
• P_OUT = 75 W Min.
• G_P = 14 dB Gain
DESCRIPTION:
The MS1006 is a 50 V Class AB epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF communications.
This device utilizes emitter ballasting for improved ruggedness and
reliability.
MS1006
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Value
Unit
110
V
55
V
4.0
V
3.25
A
127
W
+200
°C
-65 to +150
°C
Thermal Data
R_TH(j-c)
Junction-Case Thermal Resistance
2.0
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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