MS1003 Datasheet, PDF (1/3 Pages) Microsemi Corporation – 10 AMP SCHOTTKY BARRIER RECTIFIER

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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FAX: [phone]
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
Features
• 175 MHz
• 12.5 VOLTS
• P_OUT = 100 WATTS
• G_P = 6.0 dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor
designed primarily for VHF, FM communications. Diffused
emitter resistors provide high VSWR capability under rated
operating conditions. Internal impedance matching ensures
optimum power gain and efficiency over the 136-175 MHz band.
MS1003
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_DISS
T_J
T_STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
36
18
36
4.0
20
270
+200
-65 to +150
Unit
V
V
V
V
A
W
°C
°C
Thermal Data
R_TH(J-C)
Junction-case Thermal Resistance
0.65
° C/W
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