MS1000 Datasheet, PDF (1/3 Pages) Advanced Power Technology – RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 28 VOLTS
• IMD = -30 dB
• GOLD METALLIZATION
• P_OUT = 125 WATTS
• G_P = 15dB MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1000 is a 28V Class A silicon NPN planar transistor
designed primarily for SSB communications. Diffused
emitter ballast provide infinite VSWR capability
under rated operating conditions.
MS1000
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
Tj
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
T_STG
Storage Temperature
Thermal Data
R_TH(J-C)
Thermal Resistance Junction-case
Value
65
36
4.0
20
270
200
-65 to +150
0.65
Unit
V
V
V
A
W
°C
°C
° C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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