MRF904 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF904
Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High F_T - 4 GHz (typ) @ IC = 15 mAdc
2
1
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general-purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P_D
T_JMAX
T_STORAGE
Total Device Dissipation @ T_A = 25º C
Derate above 25º C
Junction Temperature
Storage Temperature
Value
Unit
15
Vdc
25
Vdc
3.0
Vdc
30
mA
200
1.14
200
-65 to +200
mWatts
mW/ ºC
°C
°C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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