MRF5812 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF5812, R1, R2
MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Noise - 2.5 dB @ 500 MHZ
• Associated Gain = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Value
15
30
2.5
200
1.25
10
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005