MRF559G Datasheet, PDF (1/5 Pages) Advanced Power Technology – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF559
MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Features
• Specified @ 12.5 V, 870 MHz Characteristics
• Output Power = .5 W
• Minimum Gain = 8.0 dB
• Efficiency 50%
• Cost Effective Macro X Package
• Electroless Tin Plated Leads for Improved Solderability
Macro X
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
Storage Temperature Range
Value
Unit
16
Vdc
30
Vdc
3.0
Vdc
150
mA
2.0
20
-65 to +150
Watts
mW/ ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005