MRF557 Datasheet, PDF (1/5 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 870 MHz Characteristics
• Output Power = 1.5 W
• Minimum Gain = 8 dB
• Efficiency 60% (Typ)
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
MRF557
MRF557G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Power Macro
DESCRIPTION: Designed primarily for wideband large signal stages in
the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 75°C
Derate above 75°C
Value
Unit
16
Vdc
30
Vdc
3.0
Vdc
500
mA
3.0
Watts
40
mW/ °C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005