MDS1100 Datasheet, PDF (1/4 Pages) Advanced Power Technology – 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz

MDS1100
1100 Watts, 50 Volts
Pulsed Avionics at 1030 MHz
GENERAL DESCRIPTION
The MDS1100 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems at 1030 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55TU-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C¹
8750 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
Maximum Temperatures
65 V
4.5 V
100 A
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
P_g
η_c
R_L
Tr
Pd
VSWR
Power Out
Power Gain
Collector Efficiency
Return Loss
Rise Time
Pulse Droop
Load Mismatch Tolerance¹
TEST CONDITIONS
F = 1030 MHz, V_cc = 50 Volts
Note 2
F = 1030 MHz, V_cc = 50 Volts
Note 2
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
θjc¹
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
Ie = 50 mA
Ic = 100 mA
Vce = 5V, Ic = 5A
NOTES: 1. At rated output power and pulse conditions
2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period, Pin = 130 Watts
Rev B, September 2005
MIN TYP MAX UNITS
1000
W
8.9
dB
45
%
11
4.0:1
dB
100 nS
0.7
dB
3.5
V
65
V
20
0.02 °C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.