DME800 Datasheet, PDF (1/4 Pages) Advanced Power Technology – 800 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz

DME800
800 Watts, 50 Volts
Pulsed Avionics 1025 to 1150 MHz
GENERAL DESCRIPTION
The DME800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width
and duty required for DME applications. The device has gold thin-film
metalization for proven highest MTTF. The transistor includes input and output
prematch for broadband capability. Low thermal resistance package reduces
junction temperature, extends life.
CASE OUTLINE
55ST-1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25°C¹
2500 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces)
Emitter to Base Voltage (BV_ebo)
Collector Current (I_c)
65 V
3V
50 A
Maximum Temperatures
Storage Temperature
-65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
P_out
Power Out
P_g
Power Gain
η_c
Collector Efficiency
R_L
Return Loss
Tr
Rise Time
Pd
VSWR
Pulse Droop
Load Mismatch Tolerance¹
TEST CONDITIONS
Pulse Width = 10 µs,
Pin = 100 Watts
Vcc = 50 Volts
F = 1025-1150 MHz
Long Term Duty Factor = 1%
F = 1025 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BV_ebo
BV_ces
h_FE
θjc²
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC – Current Gain
Thermal Resistance
NOTES: 1. At rated output power and pulse conditions
2. At rated pulse conditions
I_e = 20 mA
I_c = 50 mA
V_ce = 5V, I_c = 600mA
MIN TYP MAX UNITS
800
1000 W
9.0
10.0 dB
40
%
-9
3.0:1
dB
200 ns
0.7 dB
3.5
65
20
0.04 0.06
V
V
°C/W
Issued June 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
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