BFY90 Datasheet, PDF (1/4 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, To-72 packaged VHF/UHF Transistor
• Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA,
• 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC
• Power Gain, G_PE = 19 dB (typ) @ 200 MHz
BFY90
2
1
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25º C
Derate above 25º C
Value
15
30
2.5
50
200
1.14
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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