BFR96 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR96
BFR96G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
• High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
• Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
• High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 100ºC
Derate above 100ºC
Value
15
20
3.0
100
500
10
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005