BFR91 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
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RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR91
BFR91G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
• High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
• Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
• High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Storage Temperature
R_θJA
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Value
12
15
3.0
35
180
2.0
-65 to +150
500
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
ºC
ºC/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005