ARF448A_03 Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE

D
ARF448A
G
S
TO-247
ARF448B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
150V 140W 65MHz
The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.
Specified 150 Volt, 40.68 MHz Characteristics:
Low Cost Common Source RF Package.
Â¥
Output Power = 140 Watts.
Very High Breakdown for Improved Ruggedness.
Â¥
Gain = 15dB (Class C)
Low Thermal Resistance.
Â¥
Efficiency = 75%
Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol Parameter
V_DSS
V_DGO
I_D
V_GS
P_D
R_qJC
T_J,T_STG
T_L
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T_C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T_C = 25°C unless otherwise specified.
ARF448A/448B
UNIT
450
Volts
450
15
Amps
±30
Volts
230
Watts
0.55
° C/W
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250 mA)
450
V_DS(ON) On State Drain Voltage ¹ (I_D(ON) = 7.5A, V_GS = 10V)
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
g_fs
Forward Transconductance (V_DS = 25V, I_D = 7.5A)
5
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 50mA)
2
3
25
250
±100
8.5
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
mA
nA
mhos
Volts