ARF1502 Datasheet, PDF (1/2 Pages) Advanced Power Technology – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

S
D
S
ARF1502
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
ARF1500
BeO
135-05
S
G
S
D
G
S
65V 1500W 40MHz
The ARF1500 is an RF power transistor designed for class C/E operation in very high power scientific, commercial,
medical and industrial RF power generator and amplifier applications up to 40 MHz.
• Specified 65 Volt, 27.12 MHz Characteristics:
• High Performance Power RF Package.
•
Output Power = 900 Watts.
•
Gain = 17dB (Class C)
D ^•
Efficiency > 75%
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
E ^N MAXIMUM RATINGS
Symbol
C _{IO VDSS}
V_DGO
N _{T ID}
V_GS
A ^A _PD
V ^TJ^,TSTG
M _TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Device Dissipation @ T_C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T_C = 25°C unless otherwise specified.
ARF 1500
UNIT
200
Volts
200
70
Amps
±30
Volts
1500
Watts
-55 to 200
°C
300
D _{R STATIC ELECTRICAL CHARACTERISTICS}
A Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
O _{BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)}
200
F ^{VDS(ON) On State Drain Voltage 1 (ID(ON) = 35A, VGS = 10V)}
IN ^IDSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
4.0
100
1000
±400
Volts
µA
nA
g_fs
Forward Transconductance (V_DS = 25V, I_D = 35A)
8
11
mhos
V_isolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
2500
Volts
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 50mA)
3
5
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
MIN
R_θJC
R_θCS
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
TYP
0.09
MAX
0.12
UNIT
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA:
405 S.W. Columbia Street
Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
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