APTM50HM75SCT Datasheet, PDF (1/7 Pages) Advanced Power Technology – Full bridge Series & SiC parallel diodes MOSFET Power Module

APTM50HM75SCT
Full bridge
Series & SiC parallel diodes
MOSFET Power Module
V_DSS = 500V
R_DSon = 75mW max @ Tj = 25°C
I_D = 46A @ Tc = 25°C
CR1A
VBUS
CR3A
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
G1
S1
G2
S2
NTC1
CR1B CR3B
Q1
Q3
OUT1 OUT2
CR2A
CR4A
CR2B CR4B
Q2
Q4
0/VBUS
G3
S3
G4
S4
NTC2
Features
· Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
· Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
G3
G4
OUT2
S3
S4
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
VB US
0/VBUS
OUT1
S1
S2
NTC2
G1
G2
NTC1
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Max ratings Unit
500
V
T_c = 25°C
46
T_c = 80°C
34
A
184
±30
V
75
mW
T_c = 25°C
357
W
46
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
APT website – http://www.advancedpower.com
1–7