APTM50H10FT3 Datasheet, PDF (1/6 Pages) Advanced Power Technology – Full - Bridge MOSFET Power Module

APTM50H10FT3
Full - Bridge
MOSFET Power Module
V_DSS = 500V
R_DSon = 100mΩ max @ Tj = 25°C
I_D = 37A @ Tc = 25°C
13 14
Q1
18
22 7
19
23 8
Q2
Q3
11
10
Q4
26
4
27
3
29
30
15
31
R1
32
16
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7^® FREDFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
500
V
T_c = 25°C
37
T_c = 80°C
28
A
140
±30
V
100
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
312
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
41
A
50
mJ
1600
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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