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APTM50DUM25T Datasheet, PDF (1/3 Pages) Advanced Power Technology – Dual common source MOSFET Power Module | |||
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APTM50DUM25T
Dual common source
MOSFET Power Module
VDSS = 500V
RDSon = 25m⦠max @ Tj = 25°C
ID = 149A @ Tc = 25°C
D1
S
1
D2
Application
⢠AC Switches
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
Features
⢠Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Kelvin Drain for VDS monitoring
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
DK1
⢠Internal thermistor for temperature monitoring
NC
G1
⢠High level of integration
SK1
NC
SK2 Benefits
G2
NC
DK2
⢠Outstanding performance at high frequency operation
NC
NTC1
⢠Direct mounting to heatsink (isolated package)
NTC2
⢠Low junction to case thermal resistance
⢠Solderable terminals for signal and M5 for power for
easy PCB mounting
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
500
V
Tc = 25°C
149
Tc = 80°C
111
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
300
±30
V
25
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
1250
W
IAR Avalanche current (repetitive and non repetitive)
149
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
30
mJ
1300
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1-3
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