APTM50DHM35 Datasheet, PDF (1/6 Pages) Advanced Power Technology – Asymmetrical - Bridge MOSFET Power Module

APTM50DHM35
Asymmetrical - bridge
MOSFET Power Module
V_DSS = 500V
R_DSon = 35mW max @ Tj = 25°C
I_D = 99A @ Tc = 25°C
G1
VBUS
S1
OUT1
0/VBUS
OUT2
Application
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
Features
· Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
· High level of integration
Benefits
· Outstanding performance at high frequency operation
S4
· Direct mounting to heatsink (isolated package)
G4
· Low junction to case thermal resistance
· Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
500
V
I_D Continuous Drain Current
T_c = 25°C
99
T_c = 80°C
74
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
396
±30
V
35
mW
P_D Maximum Power Dissipation
T_c = 25°C
781
W
I_AR Avalanche current (repetitive and non repetitive)
51
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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