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APTM50DDA10T3 Datasheet, PDF (1/6 Pages) Advanced Power Technology – Dual Boost chopper MOSFET Power Module | |||
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APTM50DDA10T3
Dual Boost chopper
MOSFET Power Module
VDSS = 500V
RDSon = 100m⦠max @ Tj = 25°C
ID = 37A @ Tc = 25°C
13 14
CR1
CR2
22 7
23 8
Q1
26
Q2
4
27
3
29
30
15
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Each leg can be easily paralleled to achieve a single
boost of twice the current capability
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
500
V
Tc = 25°C
37
Tc = 80°C
28
A
140
±30
V
100
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
312
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
41
A
50
mJ
1600
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1-6
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