APTM20HM10F Datasheet, PDF (1/6 Pages) Advanced Power Technology – Full - Bridge MOSFET Power Module

APTM20HM10F
Full - Bridge
MOSFET Power Module
V_DSS = 200V
R_DSon = 10mW max @ Tj = 25°C
I_D = 175A @ Tc = 25°C
G1
VBUS
S1
S3
G3
OUT1
0/VBUS
OUT2
Application
· Welding converters
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
· Motor control
Features
· Power MOS 7^® FREDFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- M5 power connectors
G2
· High level of integration
S2
Benefits
S4
· Outstanding performance at high frequency operation
G4
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
200
V
T_c = 25°C
175
T_c = 80°C
131
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
700
±30
V
10
mW
P_D Maximum Power Dissipation
T_c = 25°C
694
W
I_AR Avalanche current (repetitive and non repetitive)
89
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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