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APTM20DUM08TG Datasheet, PDF (1/6 Pages) Advanced Power Technology – Dual common source MOSFET Power Module | |||
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APTM20DUM08TG
Dual common source
MOSFET Power Module
VDSS = 200V
RDSon = 8m⦠typ @ Tj = 25°C
ID = 208A @ Tc = 25°C
Application
D1
Q1
D2
Q2
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
G1
S1
S
NT C1
G2
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
S2
- Low gate charge
- Avalanche energy rated
NT C2
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
G2
D2
S2
D1
D2
S
S1
S2
NTC2
G1
G2
NTC1
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
200
V
Tc= 25°C
208
Tc = 80°C
155
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
832
±30
V
10
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
781
W
IAR Avalanche current (repetitive and non repetitive)
100
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1â6
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