APTM20DHM16T Datasheet, PDF (1/6 Pages) Advanced Power Technology – Asymmetrical - Bridge MOSFET Power Module

APTM20DHM16T
Asymmetrical - Bridge
MOSFET Power Module
V_DSS = 200V
R_DSon = 16mW max @ Tj = 25°C
I_D = 104A @ Tc = 25°C
VBUS
Q1
CR3
G1
S1
O UT1
O UT2
Q4
CR2
0/VBU S SENSE
NT C1
0/VBU S
VBUS SENSE
G4
S4
NT C2
VBUS
SENSE
VBUS
S1
G1
G4
S4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Application
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
Features
· Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
200
V
T_c= 25°C
104
T_c = 80°C
77
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
416
±30
V
16
mW
P_D Maximum Power Dissipation
T_c = 25°C
390
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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