APTM20DAM10T Datasheet, PDF (1/6 Pages) Advanced Power Technology – Boost chopper MOSFET Power Module

APTM20DAM10T
Boost chopper
MOSFET Power Module
V_DSS = 200V
R_DSon = 10mW max @ Tj = 25°C
I_D = 175A @ Tc = 25°C
VBUS SENSE
VBUS
NT C2
CR1
Q2
G2
S2
0/VBU S
OUT
NT C1
VBUS
VBUS
SENSE
G2
S2
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
200
V
T_c = 25°C
175
T_c = 80°C
131
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
700
±30
V
10
mW
P_D Maximum Power Dissipation
T_c = 25°C
694
W
I_AR Avalanche current (repetitive and non repetitive)
89
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6