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APTM120U10SA Datasheet, PDF (1/6 Pages) Advanced Power Technology – Single switch Series & parallel diodes MOSFET Power Module | |||
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APTM120U10SA
Single switch
Series & parallel diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 100m⦠typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
SK
CR1
Application
D
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
S
⢠Motor control
Features
Q1
⢠Power MOS 7® MOSFETs
G
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
⢠AlN substrate for MOSFET improved thermal
S
D
performance
Benefits
SK
⢠Outstanding performance at high frequency
G
operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1200
V
Tc = 25°C
116
Tc = 80°C
86
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
464
±30
V
120
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
3290
W
IAR Avalanche current (repetitive and non repetitive)
24
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3200
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1â6
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