APTM120DU15 Datasheet, PDF (1/6 Pages) Advanced Power Technology – Dual common source MOSFET Power Module

APTM120DU15
Dual common source
MOSFET Power Module
V_DSS = 1200V
R_DSon = 150mΩ max @ Tj = 25°C
I_D = 60A @ Tc = 25°C
D1 D2
Q1
Q2
G1
G2
S1
S2
S
G1
D1
S
D2
S1
S2
G2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1200
V
T_c = 25°C
60
T_c = 80°C
45
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
240
±30
V
150
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
1250
W
I_AR Avalanche current (repetitive and non repetitive)
22
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6