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APTM10TAM09FP Datasheet, PDF (1/6 Pages) Advanced Power Technology – Triple phase leg MOSFET Power Module
APTM10TAM09FP
Triple phase leg
MOSFET Power Module
VDSS = 100V
RDSon = 09mΩ max @ Tj = 25°C
ID = 139A @ Tc = 25°C
VBUS1
G1
S1
G2
S2
0/ VBUS1
VBUS2
G3
S3
U
G4
S4
0/ VBUS2
VBUS3
G5
S5
V
G6
S6
0/VBUS3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
W
Features
• Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
VBUS 1
VBUS 2
VBUS 3
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
G1
G3
G5
0/VBUS 1
S1
0/VBUS 2
S3
0/VBUS 3
S5
S2
S4
S6
G2
G4
G6
U
V
W
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
Absolute maximum ratings
full bridge
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
100
V
Tc = 25°C
139
Tc = 80°C
100
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
430
±30
V
9
mΩ
PD Maximum Power Dissipation
Tc = 25°C
390
W
IAR Avalanche current (repetitive and non repetitive)
100
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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