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APTM10HM09FT3G Datasheet, PDF (1/6 Pages) Advanced Power Technology – Full - Bridge MOSFET Power Module | |||
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APTM10HM09FT3G
Full - Bridge
MOSFET Power Module
VDSS = 100V
RDSon = 9m⦠typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
13 14
Q1
18
Q3
11
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
22 7
19
23 8
Q2
10
Q4
26
4
27
3
29
30
15
31
R1
32
16
28 27 26 25
29
23 22
20 19 18
16
Features
⢠Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
30
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
100
V
ID Continuous Drain Current
Tc = 25°C
139
Tc = 80°C
100 *
A
IDM Pulsed Drain current
430
VGS Gate - Source Voltage
±30
V
RDSon Drain - Source ON Resistance
9.5
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
390
W
IAR Avalanche current (repetitive and non repetitive)
100
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1â6
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