APTM10DDAM09T3 Datasheet, PDF (1/6 Pages) Advanced Power Technology – Dual Boost chopper MOSFET Power Module

APTM10DDAM09T3
Dual Boost chopper
MOSFET Power Module
V_DSS = 100V
R_DSon = 9mΩ typ @ Tj = 25°C
I_D = 139A @ Tc = 25°C
13 14
CR1
CR2
22 7
23 8
Q1
26
Q2
4
27
3
29
30
15
31
R1
32
16
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS V^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
139
T_c = 80°C
100 *
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
430
±30
V
9.5
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
390
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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