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APTM100UM65D-ALN Datasheet, PDF (1/6 Pages) Advanced Power Technology – Single switch with Series diode MOSFET Power Module | |||
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APTM100UM65D-AlN
Single switch
with Series diode
MOSFET Power Module
VDSS = 1000V
RDSon = 65m⦠max @ Tj = 25°C
ID = 145A @ Tc = 25°C
Application
⢠Zero Current Switching resonant mode
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
⢠AlN substrate for improved thermal performance
S
D
Benefits
⢠Outstanding performance at high frequency
operation
SK
⢠Direct mounting to heatsink (isolated package)
G
⢠Low junction to case thermal resistance
⢠Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1000
V
Tc = 25°C
145
Tc = 80°C
110
A
580
±30
V
65
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
3250
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
30
A
50
mJ
3200
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1â6
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