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APTM100UM60F-ALN Datasheet, PDF (1/6 Pages) Advanced Power Technology – Single Switch MOSFET Power Module | |||
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APTM100UM60F-AlN
Single Switch
MOSFET Power Module
VDSS = 1000V
RDSon = 60m⦠max @ Tj = 25°C
ID = 129A @ Tc = 25°C
SK
S
G
DK
SK
G
Application
⢠Welding converters
D
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Power MOS 7® FREDFETs
DK
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
S
D
⢠High level of integration
⢠AlN substrate for improved thermal performance
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1000
V
Tc = 25°C
129
Tc = 80°C
97
A
516
±30
V
60
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
2272
W
IAR Avalanche current (repetitive and non repetitive)
25
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1â6
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