APTM100U13S Datasheet, PDF (1/5 Pages) Advanced Power Technology – Single switch Series & parallel diodes MOSFET Power Module

APTM100U13S
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
S
Q1
G
V_DSS = 1000V
R_DSon = 130mΩ typ @ Tj = 25°C
I_D = 65A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS V^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1000
V
T_c = 25°C
65
T_c = 80°C
48
A
260
±30
V
145
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
1250
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
17
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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