APTM100H45ST Datasheet, PDF (1/6 Pages) Advanced Power Technology – Full bridge Series & parallel diodes MOSFET Power Module

APTM100H45ST
Full bridge
Series & parallel diodes
MOSFET Power Module
V_DSS = 1000V
R_DSon = 450mΩ max @ Tj = 25°C
I_D = 18A @ Tc = 25°C
VBUS
CR 1A
CR3A
CR1B CR3B
Q1
Q3
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1
S1
O UT1 OUT2
G3
S3
Features
CR 2A
CR 4A
• Power MOS 7^® MOSFETs
- Low R_DSon
Q2
CR2B CR4B
Q4
- Low input and Miller capacitance
G2
S2
NTC1
0/ VBU S
G4
S4
N T C2
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G3
S3
VB US
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1000
V
T_c = 25°C
18
T_c = 80°C
14
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
72
±30
V
450
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
357
W
I_AR Avalanche current (repetitive and non repetitive)
18
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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