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APTM100DA18T Datasheet, PDF (1/6 Pages) Advanced Power Technology – Boost chopper MOSFET Power Module | |||
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APTM100DA18T
Boost chopper
MOSFET Power Module
VDSS = 1000V
RDSon = 180m⦠typ @ Tj = 25°C
ID = 43A @ Tc = 25°C
VBUS SENSE
VB US
NTC2
CR1
Q2
G2
S2
0/VBU S
OUT
NTC1
VB US
VB US
SE NSE
G2
S2
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1000
V
Tc = 25°C
43
Tc = 80°C
33
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
172
±30
V
215
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
780
W
IAR Avalanche current (repetitive and non repetitive)
25
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
1â6
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