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APTM100A13D Datasheet, PDF (1/6 Pages) Advanced Power Technology – Phase leg with Series diodes MOSFET Power Module | |||
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APTM100A13D
Phase leg
with Series diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 130m⦠max @ Tj = 25°C
ID = 65A @ Tc = 25°C
G1
VBUS
S1
S2
G2
0/VBUS
OUT
Application
⢠Zero Current Switching resonant mode
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1000
V
Tc = 25°C
65
Tc = 80°C
49
A
240
±30
V
130
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
1250
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
24
A
30
mJ
1300
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website â http://www.advancedpower.com
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