APTGF50DU120T Datasheet, PDF (1/6 Pages) Advanced Power Technology – Dual common source NPT IGBT Power Module

APTGF50DU120T
Dual common source
NPT IGBT Power Module
V_CES = 1200V
I_C = 50A @ Tc = 80°C
Application
· AC Switches
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
C1
C2
Features
· Non Punch Through (NPT) FAST IGBT
Q1
Q2
- Low voltage drop
G1
G2
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
E1
E2
- Low diode VF
- Low leakage current
E
NT C1
- Avalanche energy rated
NT C2
- RBSOA and SCSOA rated
· Kelvin emitter for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency
operation
G2
C2
E2
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
C1
C2
E
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
E1
E2
NTC2
G1
G2
NTC1
easy PCB mounting
· Easy paralleling due to positive TC of VCEsat
· Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_c = 25°C
75
T_c = 80°C
50
A
I_CM Pulsed Collector Current
T_c = 25°C
150
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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