APTC80TDU15P Datasheet, PDF (1/6 Pages) Advanced Power Technology – Triple dual Common Source Super Junction MOSFET Power Module

APTC80TDU15P
Triple dual Common Source
Super Junction MOSFET
Power Module
V_DSS = 800V
R_DSon = 150mΩ max @ Tj = 25°C
I_D = 28A @ Tc = 25°C
D1
G1
D3
G3
D5
G5
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
S1
S3
S5
S1/S2
S3/S 4
S5/ S6
Features
S2
S4
S6
•
G2
D2
G4
D4
G6
D6
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
D1
D3
D5
G1
G3
G5
S1 /S2
S1
S3/S4
S3
S5/S 6
S5
S2
S4
S6
G2
G4
G6
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
D2
D4
D6
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
800
V
T_c = 25°C
28
T_c = 80°C
21
A
110
±30
V
150
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
277
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
24
A
0.5
670
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6