APTC80A15SCT Datasheet, PDF (1/7 Pages) Advanced Power Technology – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80A15SCT
Phase leg
Serie & SiC parallel diodes
Super Junction
MOSFET Power Module
Q1
G1
S1
Q2
VBUS
NT C2
OUT
V_DSS = 800V
R_DSon = 150mW max @ Tj = 25°C
I_D = 28A @ Tc = 25°C
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Features
·
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
· Parallel SiC Schottky Diode
G2
- Zero reverse recovery
0/VBU S
S2
- Zero forward recovery
- Temperature Independent switching behavior
NT C1
- Positive temperature coefficient on VF
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
OUT
· High level of integration
VBUS
0/VBUS
OUT
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
S1
S2
NTC2
G1
G2
NTC1
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
Absolute maximum ratings
· Low profile
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
800
V
T_c = 25°C
28
T_c = 80°C
21
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
112
±30
V
150
mW
P_D Maximum Power Dissipation
T_c = 25°C
277
W
I_AR Avalanche current (repetitive and non repetitive)
24
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
0.5
mJ
670
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7