APTC80A10SCT Datasheet, PDF (1/7 Pages) Advanced Power Technology – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80A10SCT
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VBUS
NT C2
V_DSS = 800V
R_DSon = 100mW max @ Tj = 25°C
I_D = 42A @ Tc = 25°C
Application
· Motor control
· Switched Mode Power Supplies
· Uninterruptible Power Supplies
Q1
G1
S1
Q2
O UT
Features
·
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
· Parallel SiC Schottky Diode
G2
- Zero reverse recovery
- Zero forward recovery
0/VBU S
- Temperature Independent switching behavior
S2
- Positive temperature coefficient on VF
NT C1
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
OUT
· High level of integration
VBUS
Benefits
0/VBUS
OUT
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
S1
S2
NTC2
G1
G2
NTC1
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
800
V
T_c = 25°C
42
T_c = 80°C
32
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
172
±30
V
100
mW
P_D Maximum Power Dissipation
T_c = 25°C
416
W
I_AR Avalanche current (repetitive and non repetitive)
24
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
0.5
mJ
670
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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