APT80GP60B2 Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

APT80GP60B2
600V
POWER MOS 7^® IGBT
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
T-Max^TM
• Low Conduction Loss
• 200 kHz operation @ 400V, 45A
G
C
• Low Gate Charge
• 100 kHz operation @ 400V, 72A
E
C
• Ultrafast Tail Current shutoff • SSOA rated
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: T_C = 25°C unless otherwise specified.
APT80GP60B2
UNIT
V_CES
V_GE
V_GEM
I _C1
I _C2
I _CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current ⁷ @ T_C = 25°C
Continuous Collector Current ⁷ @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 25°C
Switching Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
100
330
330A @ 600V
1041
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 1.0mA)
Gate Threshold Voltage (V_CE = V_GE, I_C = 2.5mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 80A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 80A, T_j = 125°C)
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
600
3
4.5
6
2.2 2.7
2.1
1.0
5
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
mA
nA