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| APT65GP60J Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT | |||
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APT65GP60J
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
ISOTOP®
"UL Recognized"
⢠Low Conduction Loss
⢠Low Gate Charge
⢠Ultrafast Tail Current shutoff
⢠100 kHz operation @ 400V, 33A
⢠50 kHz operation @ 400V, 47A
⢠SSOA rated
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT65GP60J
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
130
60
250
250A@600V
431
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1000µA)
600
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)
3
4.5
6
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
2.2 2.7
2.1
1000
5000
IGES Gate-Emitter Leakage Current (VGE = ±20V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
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