APT6035BN Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D
G
S
TO-247
APT6035BN 600V 19.0A 0.35Ω
POWER MOS IV^®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT6035BN
UNIT
V_DSS
I_D
I_DM
V_GS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage
600
Volts
19
Amps
76
±30
Volts
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
310
Watts
2.5
W/°C
T_J,T_{STG Operating and Storage Junction Temperature Range}
T_L
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
600
I_D(ON) On State Drain Current ² (V_DS > I_D(ON) x R_DS(ON) Max, V_GS = 10V)
19
R_DS(ON) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D [Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(TH) Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0mA)
2
TYP MAX UNIT
Volts
Amps
0.35 Ohms
250
1000
±100
4
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic
R_θJC
R_θJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.40
40
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
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F-33700 Merignac - France
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