APT50M80B2LC Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

APT50M80B2LC
APT50M80LLC
500V 58A 0.080W
POWER MOS VI^TM
B2LC
Power MOS VI^TM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C_iss and C_rss.
Lower gate charge coupled with Power MOS VI^TM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
TO-264
LLC
• Identical Specifications: T-MAX™ or TO-264 Package
D
• Lower Gate Charge & Capacitance
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
Drain-Source Voltage
AL Continuous Drain Current @ T_C = 25°C
IC Pulsed Drain Current ¹
N _{Gate-Source Voltage Continuous}
CH Gate-Source Voltage Transient
TE ^{N Total Power Dissipation @ TC = 25°C}
D ^{IO Linear Derating Factor}
E ^T _{Operating and Storage Junction Temperature Range}
NC ^{MA Lead Temperature: 0.063" from Case for 10 Sec.}
A ^R Avalanche Current ¹ (Repetitive and Non-Repetitive)
DV ^{FO Repetitive Avalanche Energy 1}
A IN Single Pulse Avalanche Energy ⁴
APT50M80
500
58
232
±30
±40
625
5.0
-55 to 150
300
58
50
3000
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
500
I_D(on) On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
58
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
3
TYP MAX UNIT
Volts
Amps
0.080 Ohms
25
µA
250
±100 nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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