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| APT50GP60S Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT | |||
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APT50GP60B
APT50GP60S
600V
POWER MOS 7® IGBT
TO-247
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency G
switchmode power supplies.
C
E
D3PAK
C
G
E
⢠Low Conduction Loss
⢠Low Gate Charge
⢠Ultrafast Tail Current shutoff
⢠200 kHz operation @ 400V, 26A
⢠100 kHz operation @ 400V, 41A
⢠SSOA rated
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT50GP60B_S
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
72
190
190A@600V
625
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 500µA)
600
VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
3
4.5
6
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
2.2 2.7
2.1
500
2500
IGES Gate-Emitter Leakage Current (VGE = ±20V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
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