APT50GP60J Datasheet, PDF (1/6 Pages) Advanced Power Technology – POWER MOS 7 IGBT

APT50GP60J
600V
POWER MOS 7^® IGBT
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 200 kHz operation @ 400V, 19A
• 100 kHz operation @ 400V, 26A
• SSOA rated
ISOTOP^®
"UL Recognized"
C
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: T_C = 25°C unless otherwise specified.
APT50GP60J
UNIT
V_CES
V_GE
V_GEM
I _C1
I _C2
I _CM
SSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 25°C
Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
46
190
190A@600V
329
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 500µA)
Gate Threshold Voltage (V_CE = V_GE, I_C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 50A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 50A, T_j = 125°C)
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 600V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
600
3
4.5
6
2.2 2.7
2.1
500
2500
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA