APT50GF60HR Datasheet, PDF (1/2 Pages) Advanced Power Technology – The Fast IGBT is a new generation of high voltage power IGBTs.

APT50GF60HR
600V 55A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
TO-258
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
C
• Low Tail Current
• Ultra Low Leakage Current
CEG
• Avalanche Rated
• RBSOA and SCSOA Rated
G
• Hermetic Package
E
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_CES
V_CGR
V_GE
I _C1
I _C2
I _CM
I _LM
E_AS
P_D
T_J,T_STG
T_L
Parameter
APT50GF60HR
PRELIMINARY ^{Collector-Emitter Voltage}
Collector-Gate Voltage (R_GE = 20KW)
Gate-Emitter Voltage
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 90°C
Pulsed Collector Current ¹ @ T_C = 25°C
RBSOA Clamped Inductive Load Current @ R_g = 11W T_C = 125°C
Single Pulse Avalanche Energy ²
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
600
±20
55
50
110
100
75
180
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 0.5mA)
Gate Threshold Voltage (V_CE = V_GE, I _C = 700µA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = I_C2, T_j = 125°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 25°C)
Collector Cut-off Current (V_CE = V_CES, V_GE = 0V, T_j = 125°C)
Gate-Emitter Leakage Current (V_GE = ±20V, V_CE = 0V)
600
4.5 5.5 6.5
2.1 2.7
2.2 2.8
0.5
5.0
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
mA
nA
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