APT5010B2LC Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

APT5010B2LC
500V 47A 0.100 W
POWER MOS VI^TM
Power MOS VI^TM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C_iss and C_rss.
Lower gate charge coupled with Power MOS VI^TM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
• Lower Gate Charge
• Faster Switching
• 100% Avalanche Tested
MAXIMUM RATINGS
• Lower Input Capacitance
D
• Easier To Drive
• Popular TMax Package
G
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
APT5010B2LC
500
47
188
±30
±40
520
4.16
-55 to 150
300
47
50
2500
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
500
I_D(on) On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
47
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
3
0.100
25
250
±100
5
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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