APT40M35PVR Datasheet, PDF (1/2 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT40M35PVR
400V 89A 0.035Ω
POWER MOS V^®
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^® also
achieves faster switching speeds through optimized gate layout.
P-Pack
• Faster Switching
• 100% Avalanche Tested
D
• Lower Leakage
• New High Power P-Pack Package
G
MAXIMUM RATINGS
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT40M35PVR
UNIT
V_DSS
I_D
Y ^I_DM
V_GS
R _VGSM
A _PD
IN ^TJ^,TSTG
T_L
IM ^IAR
E_AR
L _EAS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
E _{STATIC ELECTRICAL CHARACTERISTICS}
PR ^{Symbol Characteristic / Test Conditions}
400
89
356
±30
±40
625
5.0
-55 to 150
300
89
50
3600
MIN TYP MAX
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
400
I_D(on) On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
89
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
0.035
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
100
500
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
±100
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 5mA)
2
4
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
UNIT
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
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