APT34N80B2C3 Datasheet, PDF (1/5 Pages) Advanced Power Technology – Super Junction MOSFET

APT34N80B2C3
APT34N80LC3
800V 34A 0.145Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• Popular T-MAX™ or TO-264 Package
T-MAX™
TO-264
D
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT34N80B2C3_LC3 UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800
Volts
34
Amps
102
±20
Volts
±30
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
417
3.33
Watts
W/°C
T_J,T_STG
T_L
dv_/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 640V, I_D = 34A, T_J = 125°C)
Repetitive Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
-55 to 150
300
50
17
0.5
670
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS
R_DS(on)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 500µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 22A)
800
0.125 0.145
I_DSS
Zero Gate Voltage Drain Current (V_DS = 800V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 800V, V_GS = 0V, T_J = 150°C)
1.0
50
500
I_GSS Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
±200
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 2mA)
2.10
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
"COOLMOS^™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"