APT12080JVFR Datasheet, PDF (1/4 Pages) Advanced Power Technology – POWER MOS V

APT12080JVFR
1200V 15A 0.800Ω
POWER MOS V^®
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
ISOTOP^®
"UL Recognized"
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular SOT-227 Package
D
FREDFET
G
MAXIMUM RATINGS
S
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT12080JVFR
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
1200
15
60
±30
±40
Volts
Amps
Volts
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
450
3.60
Watts
W/°C
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
-55 to 150
300
15
50
2500
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D= 7.5A)
Zero Gate Voltage Drain Current (V_DS = 1200, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 960V, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
1200
2
0.800
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com