APT12060B2VFR Datasheet, PDF (1/4 Pages) Advanced Power Technology – POWER MOS V

APT12060B2VFR
APT12060LVFR
1200V 20A 0.600Ω
POWER MOS V^®
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
• Popular T-MAX™ or TO-264
Package
D
FREDFET
G
MAXIMUM RATINGS
Symbol Parameter
S
All Ratings: T_C = 25°C unless otherwise specified.
APT12060B2VFR_LVFR UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
1200
20
80
±30
±40
625
5.00
-55 to 150
300
20
50
3000
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D= 10A)
Zero Gate Voltage Drain Current (V_DS = 1200, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 960V, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
1200
2
Volts
0.600 Ohms
250
µA
1000
±100 ^nA
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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